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RF Power Field-Effect Transistors

Transistors

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Composite Price
price qty
$42.23 1
Drain Current-Max (ID)
0.3
38.0

0.3 A - 38.0 A

A
A
Polarity/Channel Type
Risk Rank
2.21
8.58

2.21 - 8.58

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42 results found

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  Base Number X
Manufacturer Part Number
Composite Price X Stock X Description X Package Code X Pin Count X Risk Rank X Risk Rank Array X Price Outlier X Polarity/Channel Type X FET Technology X Surface Mount X JESD-30 Code X Package Style X Package Body Material X Package Shape X Terminal Form X Terminal Position X Transistor Element Material X Operating Mode X Number of Terminals X Configuration X Highest Frequency Band X Number of Elements X DS Breakdown Voltage-Min X Transistor Application X Distributor X Qualification Status X Case Connection X Time@Peak Reflow Temperature-Max (s) X Peak Reflow Temperature (Cel) X Operating Temperature-Max X Drain Current-Max (ID) X Subcategory X Additional Feature X Terminal Finish X JESD-609 Code X Drain Current-Max (Abs) (ID) X Power Dissipation-Max (Abs) X Power Dissipation Ambient-Max X Stock Price History X Moisture Sensitivity Level X Power Gain-Min (Gp) X Reference Standard X JEDEC-95 Code X Average Price X Max Price X Min Price X Drain-source On Resistance-Max X Feedback Cap-Max (Crss) X Operating Temperature-Min X Turn-on Time-Max (ton) X Turn-off Time-Max (toff) X Avalanche Energy Rating (Eas) X Pulsed Drain Current-Max (IDM) X
  IXZR16N60 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, ISOPLUS 247, 3 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
private
  2SK2596 private Component
2SK2596BXTL-E
Renesas Electronics Corporation
View and download datasheet
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SC-62, UPAK-3
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private
private
private °C
private A
private
private A
private W
private
private
  ARF466 private Component
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
private
  2SK2794 private Component
2SK2794
Renesas Electronics Corporation
View and download datasheet
Si, RF POWER, FET, COMPACT, RP8P, 3 PIN
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private
  2SK3391 private Component
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, UPAK-3
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private °C
private A
private
private A
private W
  2SK3175 private Component
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RFPAK-2
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private °C
private A
private
private A
private W
  2SK3390 private Component
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RP8P, 3 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private °C
private A
private
private A
private W
  RD07MUS2 private Component
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
private
  SFF20 private Component
SFF20N60P
Solid State Devices Inc (SSDI)
View and download datasheet
Power Field-Effect Transistor, 20A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259,
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private A
private
private Ω
  IXZR18N50 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, ISOPLUS 247, 3 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
  RQA0003 private Component
RQA0001DNSTR-E
Renesas Electronics Corporation
View and download datasheet
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 3 X 3 MM, 0.80 MM HEIGHT, LEAD FREE, WSON-2, 2 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private
private A
private
  ARF462 private Component
ARF462A
Advanced Power Technology
View and download datasheet
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private A
private
  IXZH10N50 private Component
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private °C
private A
private
  LR2541 private Component
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET,
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private °C
private A
private
  RQA0001 private Component
RQA0001TL-E
Renesas Electronics Corporation
View and download datasheet
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 3 X 3 MM, 0.80 MM HEIGHT, HWSON-2, 2 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private A
private
  LR2401 private Component
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private
private
private A
private
  IXZR08N120 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, ISOPLUS 247, 3 PIN
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
  MSAFI30 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, POWER PACKAGE-3
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
  RD07MVS2 private Component
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private
private V
private
private
private
private A
  MSAEI30 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, POWER PACKAGE-3
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
  MSAEI38 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, POWER PACKAGE-3
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
  MSAFI38 private Component
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, POWER PACKAGE-3
private
private
private
private
private
private
private
private
private
3 more available
private
RECTANGULAR available
SQUARE available
private
4 more available
private
2 more available
private
private
private
private
private
private V
private
private
private
private
private
private °C
private A
private
private
2 more available
private
private A
private W
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