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GM23V8100A-25
SK Hynix Inc
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 250 ns | MASK ROM | IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE | 8 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 50 µA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PDIP-T42 | Not Qualified | e0 | 70 °C | 42 | PLASTIC/EPOXY | DIP | DIP42,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 42.0375 mm | 15.24 mm | SK HYNIX INC | DIP, DIP42,.6 | compliant | EAR99 | 8542.32.00.71 | |||||||||
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HN62442BP-10
Renesas Electronics Corporation
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Check for Price | Transferred | 2.0972 Mbit | 16 | 128KX16 | 5 V | 100 ns | MASK ROM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 52.8 mm | 15.24 mm | RENESAS ELECTRONICS CORP | DIP, | compliant | EAR99 | 8542.32.00.71 | DIP | 40 | |||||||||||||||
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G5364P-4
GTE Microcircuits
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 450 ns | MASK ROM | 8000 | 8.192 k | 200 µA | 20 µA | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e0 | 70 °C | 24 | PLASTIC/EPOXY | DIP | DIP24(UNSPEC) | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | DUAL | GTE MICROCIRCUITS | DIP, DIP24(UNSPEC) | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||||||
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K3N3C3000D-DC080
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 80 ns | MASK ROM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 41.91 mm | 15.24 mm | SAMSUNG SEMICONDUCTOR INC | DIP, | compliant | EAR99 | 8542.32.00.71 | DIP | 32 | ||||||||||||
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K3N3C3000D-GC08
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 80 ns | MASK ROM | TTL COMPATIBLE I/O | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 50 µA | 50 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOP | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 3 mm | 20.47 mm | 11.43 mm | SAMSUNG SEMICONDUCTOR INC | SOP, SOP32,.56 | unknown | EAR99 | 8542.32.00.71 | SOIC | 32 | ||||||||
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M5M23160FP
Mitsubishi Electric
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Check for Price | Obsolete | 16.7772 Mbit | 8 | 2MX8 | 5 V | 150 ns | MASK ROM | 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | 70 °C | 44 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 3.1 mm | 27.94 mm | 13 mm | MITSUBISHI ELECTRIC CORP | SOP, | unknown | EAR99 | 8542.32.00.71 | SOIC | 44 | ||||||||||||||
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F357035S
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 350 ns | MASK ROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | NMOS | R-GDIP-T28 | Not Qualified | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 6.43 mm | 37.085 mm | 15.24 mm | FAIRCHILD SEMICONDUCTOR CORP | DIP, | unknown | EAR99 | 8542.32.00.71 | DIP | 28 | ||||||||||||||||||
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TC5316210BF
Toshiba America Electronic Components
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Check for Price | No | No | Active | 16.7772 Mbit | 8 | 2MX8 | 5 V | 150 ns | MASK ROM | 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e0 | 70 °C | 44 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 3.1 mm | 28.2 mm | 12.6 mm | TOSHIBA CORP | 0.600 INCH, PLASTIC, SOP-44 | unknown | EAR99 | 8542.32.00.71 | SOIC | 44 | |||||||||
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UPD23C16300GZ-XXX-MJH-A
NEC Electronics Group
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Check for Price | Obsolete | 16.7772 Mbit | 16 | 1MX16 | 3 V | 90 ns | MASK ROM | 8 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3.6 V | 2.7 V | MOS | COMMERCIAL | R-PDSO-G48 | Not Qualified | e6 | 70 °C | -10 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN BISMUTH | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | NEC ELECTRONICS CORP | 12 X 20 MM, PLASTIC, TSOP1-48 | unknown | EAR99 | 8542.32.00.71 | TSOP1 | 48 | |||||||||
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R2364B-3P
Conexant Systems Inc
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 300 ns | MASK ROM | 8000 | 8.192 k | 55 µA | MOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | CONEXANT SYSTEMS | DIP, DIP28,.6 | compliant | EAR99 | 8542.32.00.71 |