Manufacturer | Description | Price Range | Set Alert | Details |
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MACOM | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN | $43.9800 / $57.9400 |
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Motorola Mobility LLC | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN |
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Advanced Semiconductor Inc | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 |
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TE Connectivity | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN |
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Motorola Semiconductor Products | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN |
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New Jersey Semiconductor Products Inc | Trans RF MOSFET N-CH 120V 6A 4-Pin Case 211-07 |
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