| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| MACOM | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN | $27.1600 / $49.1000 |
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| Advanced Semiconductor Inc | RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | $46.3500 / $56.6500 |
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| Motorola Semiconductor Products | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN | $17.6540 / $27.1600 |
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| Motorola Mobility LLC | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN |
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| TE Connectivity | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN |
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| New Jersey Semiconductor Products Inc | Trans RF MOSFET N-CH 65V 2.5A 4-Pin Case 211-07 |
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| Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,2.5A I(D),SOT-123VAR |
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