Manufacturer | Description | Price Range | Set Alert | Details |
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MACOM | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN | $44.8200 / $67.8600 |
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Advanced Semiconductor Inc | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | $55.1300 / $69.7900 |
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Motorola Semiconductor Products | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN |
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New Jersey Semiconductor Products Inc | Trans RF MOSFET N-CH 65V 9A 4-Pin Case 211-11 |
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Motorola Mobility LLC | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN |
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TE Connectivity | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN |
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