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2389

NTE Electronics Inc

Power Field-Effect Transistors

Description:

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details Export to CSV

  • Manufacturer Part Number 2389
  • Description Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
  • Manufacturer NTE Electronics Inc
  • Risk Rank 5.82
  • Part Life Cycle Code private
  • Ihs Manufacturer private
  • Part Package Code private
  • Package Description private
  • Pin Count private
  • Reach Compliance Code private
  • ECCN Code private
  • Distributor private
  • Case Connection private
  • Configuration private
  • DS Breakdown Voltage-Min private V
  • Drain Current-Max (ID) private A
  • Drain-source On Resistance-Max private Ω
  • FET Technology private
  • JEDEC-95 Code private
  • JESD-30 Code private
  • Number of Elements private
  • Number of Terminals private
  • Operating Mode private
  • Package Body Material private
  • Package Shape private
  • Package Style private
  • Polarity/Channel Type private
  • Qualification Status private
  • Surface Mount private
  • Terminal Form private
  • Terminal Position private
  • Transistor Application private
  • Transistor Element Material private

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  • Monitor/Table Mat Interconnect Cord, 10', no resistors

  • Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN